aug. '97 technical note mitsubishi electric *mitsubishi electric corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MGF7169C mitsubishi semiconductor uhf band gaas power amplifier (1/20) specifications are subject to change without notice. description the MGF7169C is a monolithic microwave integrated circuit for use in cdma base handheld phone. application 1.9ghz band handheld phone quality grade gg features low voltage operation : vd=3.0v high output power : po=28dbm typ. @f=1.85~1.91ghz low distortion : acp=-46dbc max. @po=28dbm high efficiency : id=520ma typ. @po=28dbm small size : 7.0 x 6.1 x 1.1 mm surface mount package 2 stage amplifier external matching circuit is required block diagram of this ic and application circuit example. battery regulator vdd vd1 hpa pout matching circuit vd2 MGF7169C pin matching circuit vg1 vg2 negative voltage generator pi po vd1 vd2 vg mc gnd case : rf input : rf output : drain bias 1 : drain bias 2 : gate bias : note1 : connect to gnd : connect to gnd pin configuration (top view) gnd vd2 / po vg1 vg2 pi vd1 gnd mc note1:connect to matching circuit
mitsubishi electric (2/20) absolute maximum ratings (ta=25 ?c ) symbol parameter ratings unit 6 v -30 ~ +100 -30 ~ +85 -4 v vd1,vd2 tc(op) tstg vg pi drain supply voltage operating case temperature storage temperature gate supply voltage input power dbm 15 *1.each maximum rating is guaranteed independently. ?c ?c MGF7169C mitsubishi semiconductor uhf band gaas power amplifier aug. '97 preliminary information note : sampling inspection electrical characteristics (ta=25? c ) *cdma is code division multiple access. oqpsk is modulation method, off-set quadrature phase shift keying. electrical characteristics are changed by the external matching circuit. limits are guaranteed by using mitsubishi test fixture. symbol pout idt parameter output power total drain current min typ max unit dbm f test conditions frequency 1850 1910 mhz 3 limits ig gate current ma 520 ma -3 dbc -30 2sp 2nd harmonics rin input vswr damage with-standing stability vd1=vd2=3.0v, pin=7dbm, load vswr=10, all phase time=10 sec no damage no oscillation spurious level -60dbc vd1=vd2=3.0v, pin=7dbm, load vswr=3:1, all phase note note 28 vd1=vd2=3.0v,vg1=vg2=-2.0v, pin=7dbm cdma modulated signal based on is-95 std. (1.2288mbps spreading,oqpsk) acp<-42dbc (1.25mhz off-set.) vd1=vd2=3.0v 480 450 450 acp<-44dbc (1.25mhz off-set.) vd1=vd2=3.0v acp<-46dbc (1.25mhz off-set.) vd1=vd2=3.0v acp<-44dbc (1.25mhz off-set.) vd1=vd2=3.3v idle_id idle current ma 150 50 vg1=vg2=-2.0v, po=28dbm vg1=vg2=-2.5v, po=12dbm
mitsubishi electric (3/20) aug. '97 pin vs. pout,id for cdma pin vs. pout,efficiency for cdma fin=1880mhz vd1=vd2=3.0v vg1=vg2=-2.0v cdma evaluation MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) 0 200 400 600 800 1000 1200 1400 id (ma) 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) 0 10 20 30 40 50 60 70 efficiency (%) idt id2 id1 pout efficiency pout fin=1880mhz vd1=vd2=3.0v vg1=vg2=-2.0v cdma evaluation
mitsubishi electric (4/20) aug '97 pin vs.pout,gain for cdma pin vs. pout,acpr for cdma preliminary information MGF7169C mitsubishi semiconductor uhf band gaas power amplifier 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) 0 5 10 15 20 25 30 35 gain (db) gain pout 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) -55 -45 -35 -25 -15 -5 5 15 acpr (dbc) pout acpr fin=1880mhz vd1=vd2=3.0v vg1=vg2=-2.0v cdma evaluation fin=1880mhz vd1=vd2=3.0v vg1=vg2=-2.0v cdma evaluation
mitsubishi electric (5/20) aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information 2sp=-53.3dbc 3sp=-31.3dbc fin=1880mhz vd1=vd2=3.0v vg1=vg2=-2.0v pout=28dbm cdma evaluation
mitsubishi electric (6/20) aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information vd dependence of pin vs.pout,idt vd dependence of pin vs.pout,efficiency 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) 0 200 400 600 800 1000 1200 1400 id (ma) pout idt 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) 0 10 20 30 40 50 60 70 efficiency (%) pout efficiency fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v
mitsubishi electric (7/20) aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information vd dependence of pin vs.pout,gain vd dependence of pin vs.pout,acpr 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) 0 5 10 15 20 25 30 35 gain (db) pout gain 0 5 10 15 20 25 30 35 -12 -8 -4 0 4 8 12 16 pin (dbm) pout (dbm) -55 -45 -35 -25 -15 -5 5 15 acpr (dbc) pout acpr fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v
mitsubishi electric aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information vd dependence of fin vs. gain,idt 15 20 25 30 1.84 1.86 1.88 1.90 1.92 frequency (ghz) gain (db) 0 200 400 600 idt (ma) gain idt vd dependence of fin vs. id1,id2 0 50 100 150 1.84 1.86 1.88 1.90 1.92 frequency (ghz) id1 (ma) 0 200 400 600 id2 (ma) id2 id1 fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v (8/20)
mitsubishi electric aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information vd dependence of fin vs. gain,efficiency 20 25 30 35 1.84 1.86 1.88 1.90 1.92 frequency (ghz) gain (db) 20 30 40 50 efficiency (%) efficiency gain vd dependence of fin vs. gain,acpr 10 15 20 25 1.84 1.86 1.88 1.90 1.92 frequency (ghz) gain (db) -40 -30 -20 -10 acpr (dbc) gain acpr fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v fin=1880mhz vg1=vg2=-2.0v cdma evaluation vd=2.6v vd=3.0v vd=3.4v (9/20)
mitsubishi electric (10/20) aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information vd1=vd2=3.0v vg1=vg2=-2.0v pout=28dbm f=1.85ghz f=1.88ghz f=1.91ghz temp. dependence of fin vs. gain,acpr temp. dependence of fin vs. id1,id2 10 15 20 25 -30 -10 10 30 50 70 90 temperature (??) gain (db) -40 -30 -20 -10 acpr+1.25mhz (dbc) gain acpr 0 50 100 150 -30 -10 10 30 50 70 90 temperature (??) id1 (ma) 0 100 200 300 400 500 600 id2 (ma) id1 id2 vd1=vd2=3.0v vg1=vg2=-2.0v pout=28dbm f=1.85ghz f=1.88ghz f=1.91ghz
equivalent circuit of test board for cdma(1.85-1.91ghz) mgf 7169c l=2.0 w=1.0 l=8.5 w=1.0 l=8.0 w=1.0 1.5pf 2.5pf pin l=2.0 w=2.2 l=23.5 w=0.5 l=11.0 w=1.0 4.0pf 4.5pf pout vd2 1000pf mitsubishi electric (11/20) aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information unit:mm sub. data er=4.8 h=600 mm metal t=43 mm
test circuit board for cdma(1.85-1.91ghz) (12/20) mitsubishi electric aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information sub. data er=4.8 h=600 m m metal t=43 m m pout 40 x 60 mm pin vg1 vg2 vd1 vd2 1000pf 1000pf 4.0pf 4.5pf 2.5pf 1.5pf 1000pf 10 ohm 1000pf 1000pf 3k ohm (this will be included in pkg for mass production)
mitsubishi electric (13/20) aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information equivalent circuit of MGF7169C with our test board : MGF7169C(ceramic package) : our test board( er=4.8, t=0.6mm) fet1 fet2 pin pout vd1 vd2 vg1 vg2 matching circuits zi(es) zl(es)
(14/20) mitsubishi electric aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information input/output impedance (@1.85-1.91ghz) zi(es) = 6.8 - j22.7 ( w ) f=1.85ghz 6.7 - j21.3 ( w ) f=1.88ghz 6.6 - j19.8 ( w ) f=1.91ghz zl(es) = 4.3 - j3.2 ( w ) f=1.85ghz 4.2 - j2.7 ( w ) f=1.88ghz 4.0 - j2.3 ( w ) f=1.91ghz conditions; vd1=vd2=3.0v vg1=vg2=-2.0v pout=28dbm
preliminary information outline drawing unit : mm mitsubishi electric MGF7169C mitsubishi semiconductor uhf band gaas power amplifier aug. '97 2 - (2.4) 1.1+/-0.2 6.1+/-0.2 5.2 7.0+/-0.2 0.3 0.3 1 2 3 4 5 6 8 7 6.2 4 - r0.2 note1 4.1 8 - (4.9) 2 - (0.1) p1.27 x 4 = 5.08+/-0.1 8 - (0.5) 8 - (0.4) 4.28 2 - 2.06 (1.2) 2 - (0.1) 6 - 0.8+/-0.1 note1 : 1 pin mark note2 : the values without tolerance are typical. terminal connection 6 rf in (pi) vg1 vd1 mc vg2 8 7 gnd gnd rf out (po) & vd2 case:gnd 3 5 4 1 2 (15/20)
mitsubishi electric (16/20) 0.9 2.16 4.10 4.90 0.45 1.27 x 4=5.08 7.40 1.0 2.50 1.4 1.2 0.8 0.8 2.14 unit:mm recommended mount pad aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information
mitsubishi electric (17/20) recommended temperature profile aug. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information 1) infrared reflow and air reflow temperature profile temperature time approx. 60sec 150 deg.c 1~4 deg.c/sec max. 240 deg.c max. 10sec 1~4 deg.c/sec notes 1) temperature profile on package surface 2) reflow process : up to three times
mitsubishi semiconductor uhf band gaas power amplifier mitsubishi electric (18/20) oct. '97 MGF7169C preliminary information unit:mm sub. data er=4.8 h=600 um metal t=43 um lumped elements equivalent circuit of test board for cdma(1.85-1.91ghz) mgf 7169c l=2.0 w=1.0 1.5pf 1.0pf pin l=2.0 w=2.2 4.0pf 15pf pout vd2 1000pf chip inductor 10nh a b c d f
lumped elements test circuit board for cdma(1.85-1.91ghz) (19/20) mitsubishi electric oct. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information sub. data er=4.8 h=600um metal t=43um pout 40 x 60 mm pin vg1 vg2 vd1 vd2 1000pf 1000pf 4.0pf 15pf 1.0pf 1.5pf 1000pf 10 ohm 1000pf 1000pf 3k ohm (this will be included in pkg for mass production) 10nh line chip capacitor chip inductor this device needs 4 chip capacitors,1 chip inductor and 2 transmission lines to make input and output matching circuit. 5mm a b c d f
mitsubishi electric (20/20) oct. '97 MGF7169C mitsubishi semiconductor uhf band gaas power amplifier preliminary information lumped elements equivalent circuit of MGF7169C with our test board : MGF7169C(ceramic package) : our test board( er=4.8, t=0.6mm) fet1 fet2 pin pout vd1 vd2 vg1 vg2 matching circuits zi(es) zl(es)
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